
2N4860UB
ActiveJFETS 30V 360MW 50MA ROUND-END JFET

2N4860UB
ActiveJFETS 30V 360MW 50MA ROUND-END JFET
Description
General part information
2N4860UB-JFET-Nchannel Series
This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4860UB |
|---|---|
| Current - Drain (Idss) | 100 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 18 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | No Lead, 3-SMD |
| Package Name | UB |
| Power - Max | 360 mW |
| Resistance - RDS(On) | 40 Ohm |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) | 6 V |
Pricing
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