ZTX658STZ

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-92 COMPATIBLE, E-LINE PACKAGE-3

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX658STZ

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3, Formed Leads
Power - Max [Max]	1 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

NPN, 400V, 0.5A, E-Line

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZTX658STZ	500 mV	500 mA	E-Line (TO-92 compatible)	NPN	400 V	E-Line-3 Formed Leads	50	50 MHz	100 nA	1 W	Through Hole	-55 °C	200 C
Diodes Inc ZTX658STOA	500 mV	500 mA	E-Line (TO-92 compatible)	NPN	400 V	E-Line-3 Formed Leads	50	50 MHz	100 nA	1 W	Through Hole	-55 °C	200 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 400V, 0.5A, E-Line

Technical documentation and resources