
BC857BWE6327
ActiveInfineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
Deep-Dive with AI
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BC857BWE6327
ActiveInfineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC857BWE6327 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 hFE |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Power - Max [Max] | 250 mW |
| Supplier Device Package | PG-SOT323 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 13172 | $ 0.02 | |
Description
General part information
BC857 Series
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
Documents
Technical documentation and resources
No documents available