HS1KLW RVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD123W

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Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	HS1KLW RVG

Capacitance @ Vr, F	7 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-123W
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Technology	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F
Taiwan Semiconductor Corporation HS1KLW RVG	800 V	1.7 V	1 A	175 ░C	-55 C	SOD-123W	200 mA 500 ns	Standard	Surface Mount	75 ns	1 µA	SOD-123W	7 pF
Taiwan Semiconductor Corporation HS1KL R3G	800 V	1.7 V	1 A	150 °C	-55 °C	DO-219AB	200 mA 500 ns	Standard	Surface Mount	75 ns	5 µA	Sub SMA	15 pF
Taiwan Semiconductor Corporation HS1K	800 V	1.7 V	1 A	150 °C	-55 °C	DO-214AC SMA	200 mA 500 ns	Standard	Surface Mount	75 ns	5 µA	DO-214AC (SMA)	15 pF
Taiwan Semiconductor Corporation HS1KFS	800 V	1.7 V	1 A	150 °C	-55 °C	SOD-128	200 mA 500 ns	Standard	Surface Mount	75 ns	1 µA	SOD-128	8 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1A Surface Mount SOD-123W

Technical documentation and resources

No documents available