IXTH200N075T

Obsolete

IXYS

MOSFET N-CH 75V 200A TO247

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Obsolete

IXYS

MOSFET N-CH 75V 200A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH200N075T

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	430 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXTH200N085T	5 mOhm	TO-247 (IXTH)	Through Hole	N-Channel	7600 pF	10 V	MOSFET (Metal Oxide)	4 V	480 W	152 nC	200 A	-55 °C	175 ░C	20 V	TO-247-3	85 V
IXYS IXTH200N075T	5 mOhm	TO-247 (IXTH)	Through Hole	N-Channel	6800 pF	10 V	MOSFET (Metal Oxide)	4 V			200 A	-55 °C	175 ░C	20 V	TO-247-3	75 V	430 W	160 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 200A (Tc) 430W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available