AUIRF3205ZSTRL

Obsolete

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF3205ZSTRL

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs [Max]	6.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies AUIRF3205ZSTRL	N-Channel	D2PAK	170 W	20 V	55 V	75 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	Surface Mount	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3450 pF	6.5 mOhm	110 nC	10 V
Infineon Technologies AUIRF3205Z	N-Channel	TO-220AB	170 W	20 V	55 V	75 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	Through Hole	4 V	TO-220-3	3450 pF	6.5 mOhm	110 nC	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 75A (Tc) 170W (Tc) Surface Mount D2PAK

Technical documentation and resources