GD25WD40CTIGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/QUAD I/O 8SOP

Search across all available documentation for this part.

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/QUAD I/O 8SOP

Technical Specifications

Parameters and characteristics for this part

Part	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Clock Frequency	Memory Organization	Memory Interface	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Access Time	Mounting Type	Memory Type	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Format	Memory Size	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25WD40EKIGR	8-USON (1.5x1.5)	1.65 V	3.6 V	104 MHz	512 K	SPI - Dual I/O	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	6 ns	Surface Mount	Non-Volatile	6 ms	100 µs	FLASH	512 kb
GigaDevice Semiconductor (HK) Limited GD25WD40CTIGR	8-SOP	1.65 V	3.6 V		512 K	SPI - Quad I/O	FLASH - NOR	85 °C	-40 °C	8-SOIC		Surface Mount	Non-Volatile			FLASH	512 kb	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25WD40ETIGR	8-SOP	1.65 V	3.6 V	104 MHz	512 K	SPI - Dual I/O	FLASH - NOR (SLC)	85 °C	-40 °C	8-SOIC	6 ns	Surface Mount	Non-Volatile	6 ms	100 µs	FLASH	512 kb	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25WD40CEIGR	8-USON (2x3)	1.65 V	3.6 V		512 K	SPI - Quad I/O	FLASH - NOR	85 °C	-40 °C	8-XFDFN Exposed Pad		Surface Mount	Non-Volatile			FLASH	512 kb

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR Memory IC 4Mbit SPI - Quad I/O 8-SOP

Technical documentation and resources