STD50NH02L-1

Obsolete

STMicroelectronics

MOSFET N-CH 24V 50A I-PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 24V 50A I-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD50NH02L-1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD50NH02L-1	Through Hole	10 V	5 V	MOSFET (Metal Oxide)	1400 pF	TO-251 (IPAK)	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	175 ░C	24 nC	10.5 mOhm	1.8 V	N-Channel	20 V	60 W	24 V	50 A
STMicroelectronics STD50N03L-1	Through Hole	10 V	5 V	MOSFET (Metal Oxide)	1434 pF	IPAK	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	175 ░C	14 nC	10.5 mOhm	1 V	N-Channel	20 V	60 W	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 24 V 50A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available