2N5116UB/TR
ActiveMicrochip Technology
FIELD EFFECT TRANSISTOR FET P-CHANNEL -30V, -0.015A TO -0.6A
2N5116UB/TR
ActiveMicrochip Technology
FIELD EFFECT TRANSISTOR FET P-CHANNEL -30V, -0.015A TO -0.6A
Description
General part information
2N5116UB-JFET-PChannel Series
This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5116UB/TR |
|---|---|
| Current - Drain (Idss) | 25 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Grade | Military |
| Input Capacitance (Ciss) (Max) | 27 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | No Lead, 3-SMD |
| Package Name | UB |
| Power - Max | 0.5 W |
| Qualification | MIL-PRF-19500 |
| Resistance - RDS(On) | 175 Ohm |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) | 4 V |
Pricing
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