IRF6716MTRPBF

NRND

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.6 MOHM;

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NRND

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6716MTRPBF

Current - Continuous Drain (Id) @ 25°C	180 A, 39 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	5150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	3.6 W, 78 W
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Infineon Technologies IRF6716MTRPBF	Surface Mount	5150 pF	N-Channel	3.6 W 78 W	20 V	1.6 mOhm	DirectFET™ Isometric MX	39 A 180 A	59 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	25 V	4.5 V 10 V	DIRECTFET™ MX
Infineon Technologies IRF6716MTRPBF	Surface Mount	5150 pF	N-Channel	3.6 W 78 W	20 V	1.6 mOhm	DirectFET™ Isometric MX	39 A 180 A	59 nC	MOSFET (Metal Oxide)	150 °C	-40 °C	25 V	4.5 V 10 V	DIRECTFET™ MX

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 39A (Ta), 180A (Tc) 3.6W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources