STW50N65DM6

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STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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STW50N65DM6

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STMicroelectronics

N-CHANNEL 650 V, 74 MOHM TYP., 33 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW50N65DM6	STW50 Series

Current - Continuous Drain (Id) @ 25°C	33 A	28 - 33 A
Drain to Source Voltage (Vdss)	650 V	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	52.5 nC	52.5 - 70 nC
Grade	-	Automotive
Input Capacitance (Ciss) (Max) @ Vds	52500 pF	3200 - 52500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	250 W	250 - 300 W
Qualification	-	AEC-Q101
Rds On (Max) @ Id, Vgs	91 mOhm	87 - 91 mOhm
Supplier Device Package	TO-247 Long Leads	TO-247 Long Leads, TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4.75 V	4.75 - 5 V

STW50 Series

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

Part	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Grade	Qualification
STMicroelectronics STW50N65DM6	650 V	MOSFET (Metal Oxide)	TO-247 Long Leads	25 V	91 mOhm	N-Channel	52.5 nC	52500 pF	33 A	4.75 V	TO-247-3	250 W	-55 °C	150 °C	10 V	Through Hole
STMicroelectronics STW50N65DM2AG	650 V	MOSFET (Metal Oxide)	TO-247-3	25 V	87 mOhm	N-Channel	70 nC	3200 pF	28 A	5 V	TO-247-3	300 W	-55 °C	150 °C	10 V	Through Hole	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 6.58
		90	$ 5.88
		300	$ 5.54
		750	$ 5.19
		1500	$ 4.67
Newark	Each	1	$ 7.29

Description

General part information

STW50 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet