IXTH12N70X2

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LITTELFUSE

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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IXTH12N70X2

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LITTELFUSE

DISCMSFT NCHULTRAJNCTN X2CLASS TO-247AD/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH12 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH12N70X2

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	960 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	180 W
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

IXTH12 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Mounting Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package Name
LITTELFUSE IXTH12N150	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	1500 V	2 Ohm	N-Channel	106 nC	12 A	3720 pF 3720 pF	4.5 V	890 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N120	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	1200 V	1.4 Ohm	N-Channel	95 nC	12 A	3400 pF	5 V	500 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N65X2	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	650 V	300 mOhm	N-Channel	17 nC	12 A	1100 pF	5 V	180 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N90	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	900 V	900 mOhm	N-Channel	170 nC	12 A	4500 pF	4.5 V	300 W	-55 °C	150 °C	20 V	TO-247 (IXTH)
LITTELFUSE IXTH12N70X2	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	700 V	300 mOhm	N-Channel	19 nC	12 A	960 pF	4.5 V	180 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N100L	Through Hole	MOSFET (Metal Oxide)	TO-247-3	20 V	1000 V	1.3 Ohm	N-Channel	155 nC	12 A	2500 pF	5 V	400 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N100	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	1000 V	1.05 Ohm	N-Channel	170 nC	12 A	4000 pF	4.5 V	300 W	-55 °C	150 °C	20 V	TO-247 (IXTH)
LITTELFUSE IXTH12N150	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	1500 V	2 Ohm	N-Channel	106 nC	12 A	3720 pF 3720 pF	4.5 V	890 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N65X2	Through Hole	MOSFET (Metal Oxide)	TO-247-3	10 V	650 V	300 mOhm	N-Channel	17 nC	12 A	1100 pF	5 V	180 W	-55 °C	150 °C	30 V	TO-247 (IXTH)
LITTELFUSE IXTH12N100L	Through Hole	MOSFET (Metal Oxide)	TO-247-3	20 V	1000 V	1.3 Ohm	N-Channel	155 nC	12 A	2500 pF	5 V	400 W	-55 °C	150 °C	30 V	TO-247 (IXTH)

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IXTH12N70X2 | Datasheet

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs