IPU50R950CEBKMA1

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Infineon Technologies

MOSFET N-CH 500V 4.3A TO251-3

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IPU50R950CEBKMA1

Unknown

Infineon Technologies

MOSFET N-CH 500V 4.3A TO251-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPU50R950CEBKMA1

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	13 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	231 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPU50R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IPU50R950CEAKMA1	13 V	950 mOhm	500 V	4.3 A	IPAK TO-251-3 Short Leads TO-251AA	53 W	-55 °C	150 °C	PG-TO251-3	231 pF	MOSFET (Metal Oxide)	N-Channel	10.5 nC	3.5 V	20 V	Through Hole
Infineon Technologies IPU50R3K0CEBKMA1	13 V	3 Ohm	500 V	1.7 A	IPAK TO-251-3 Short Leads TO-251AA	18 W	-55 °C	150 °C	PG-TO251-3	84 pF	MOSFET (Metal Oxide)	N-Channel		3.5 V	20 V	Through Hole	4.3 nC
Infineon Technologies IPU50R950CEBKMA1	13 V	950 mOhm	500 V	4.3 A	IPAK TO-251-3 Short Leads TO-251AA	34 W	-55 °C	150 °C	PG-TO251-3	231 pF	MOSFET (Metal Oxide)	N-Channel	10.5 nC	3.5 V	20 V	Through Hole
Infineon Technologies IPU50R1K4CEBKMA1	13 V	1.4 Ohm	500 V	3.1 A	IPAK TO-251-3 Short Leads TO-251AA	25 W	-55 °C	150 °C	PG-TO251-3		MOSFET (Metal Oxide)	N-Channel	8.2 nC	3.5 V	20 V	Through Hole		178 pF
Infineon Technologies IPU50R950CEAKMA2	13 V	950 mOhm	500 V	4.3 A	IPAK TO-251-3 Short Leads TO-251AA	53 W	-55 °C	150 °C	PG-TO251-3	231 pF	MOSFET (Metal Oxide)	N-Channel	10.5 nC	3.5 V	20 V	Through Hole
Infineon Technologies IPU50R3K0CEAKMA1	13 V	3 Ohm	500 V	1.7 A	IPAK TO-251-3 Short Leads TO-251AA	26 W	-55 °C	150 °C	PG-TO251-3	84 pF	MOSFET (Metal Oxide)	N-Channel		3.5 V	20 V	Through Hole	4.3 nC
Infineon Technologies IPU50R2K0CEBKMA1	13 V	2 Ohm	500 V	2.4 A	IPAK TO-251-3 Short Leads TO-251AA		-55 °C	150 °C	PG-TO251-3	124 pF	MOSFET (Metal Oxide)	N-Channel	6 nC	3.5 V	20 V	Through Hole			22 W
Infineon Technologies IPU50R1K4CEAKMA1	13 V	1.4 Ohm	500 V	3.1 A	IPAK TO-251-3 Short Leads TO-251AA	42 W	-55 °C	150 °C	PG-TO251-3		MOSFET (Metal Oxide)	N-Channel	8.2 nC	3.5 V	20 V	Through Hole		178 pF
Infineon Technologies IPU50R2K0CEAKMA1	13 V	2 Ohm	500 V	2.4 A	IPAK TO-251-3 Short Leads TO-251AA		-55 °C	150 °C	PG-TO251-3	124 pF	MOSFET (Metal Oxide)	N-Channel	6 nC	3.5 V	20 V	Through Hole			33 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPU50R Series

N-Channel 500 V 4.3A (Tc) 34W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources