STD4NK80ZT4
ActivePOWER MOSFET, N CHANNEL, 800 V, 3 A, 3.5 OHM, TO-252 (DPAK), 3 PINS, SURFACE MOUNT
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STD4NK80ZT4
ActivePOWER MOSFET, N CHANNEL, 800 V, 3 A, 3.5 OHM, TO-252 (DPAK), 3 PINS, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD4NK80ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 2500 | $ 0.88 | |
| Digikey | Cut Tape (CT) | 1 | $ 1.82 | |
| 10 | $ 1.51 | |||
| 100 | $ 1.20 | |||
| 500 | $ 1.02 | |||
| 1000 | $ 0.86 | |||
| Digi-Reel® | 1 | $ 1.82 | ||
| 10 | $ 1.51 | |||
| 100 | $ 1.20 | |||
| 500 | $ 1.02 | |||
| 1000 | $ 0.86 | |||
| Tape & Reel (TR) | 2500 | $ 0.82 | ||
| 5000 | $ 0.79 | |||
| 12500 | $ 0.76 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.37 | |
| 10 | $ 1.84 | |||
| 25 | $ 1.67 | |||
| 50 | $ 1.48 | |||
| 100 | $ 1.26 | |||
| 250 | $ 1.11 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.84 | |||
Description
General part information
STD4NK80 Series
The STD4NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
Documents
Technical documentation and resources