IXKC19N60C5
ObsoleteMOSFET N-CH 600V 19A ISOPLUS220
IXKC19N60C5
ObsoleteMOSFET N-CH 600V 19A ISOPLUS220
Description
General part information
IXKC19 Series
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXKC19N60C5 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 19 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 70 nC |
| Input Capacitance (Ciss) (Max) | 2500 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | ISOPLUS220™ |
| Package Name | ISOPLUS220™ |
| Rds On (Max) | 125 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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