1SS308(TE85L,F

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMV

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Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMV

Technical Specifications

Parameters and characteristics for this part

Specification	1SS308(TE85L,F

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	4 Common Anode
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-74A, SOT-753
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SMV
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE ARRAY GP 80V 100MA SMV

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Reverse Recovery Time (trr)	Mounting Type	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction	Technology	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS308(TE85L,F	SC-74A, SOT-753	80 V	SMV	Any Speed	200 mA	4 ns	Surface Mount	4 Common Anode	100 mA	125 °C	Standard	500 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 4 Common Anode 80 V 100mA Surface Mount SC-74A, SOT-753

Technical documentation and resources