IPB023N06N3GATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 140A TO263-7

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 140A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB023N06N3GATMA1

Current - Continuous Drain (Id) @ 25°C	140 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	198 nC
Input Capacitance (Ciss) (Max) @ Vds	16000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IPB023N06N3GATMA1	N-Channel	4 V	D2PAK TO-263-7	2.3 mOhm	Surface Mount	198 nC	16000 pF	60 V	20 V	140 A	-55 °C	175 ░C	214 W	PG-TO263-7	MOSFET (Metal Oxide)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 140A (Tc) 214W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources