IXTH110N25T

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LITTELFUSE

POWER MOSFET, N CHANNEL, 250 V, 110 A, 0.026 OHM, TO-247, THROUGH HOLE

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IXTH110N25T

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LITTELFUSE

POWER MOSFET, N CHANNEL, 250 V, 110 A, 0.026 OHM, TO-247, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH110 Series

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH110N25T

Current - Continuous Drain (Id) (Tc)	110 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	157 nC
Input Capacitance (Ciss) (Max)	9400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	694 W
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTH110 Series

DiscMSFT NChTrenchGate-Gen1 TO-247AD

Part	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max)	Vgs (Max)	FET Type	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
LITTELFUSE IXTH110N25T	250 V	157 nC	Through Hole	MOSFET (Metal Oxide)	110 A	24 mOhm	9400 pF	TO-247-3	694 W	4.5 V	20 V	N-Channel	TO-247 (IXTH)	10 V	-55 °C	150 °C
LITTELFUSE IXTH110N25T	250 V	157 nC	Through Hole	MOSFET (Metal Oxide)	110 A	24 mOhm	9400 pF	TO-247-3	694 W	4.5 V	20 V	N-Channel	TO-247 (IXTH)	10 V	-55 °C	150 °C
LITTELFUSE IXTH110N10L2	100 V	260 nC	Through Hole	MOSFET (Metal Oxide)	110 A	18 mOhm	10500 pF	TO-247-3	600 W	4.5 V	20 V	N-Channel	TO-247 (IXTH)	10 V
LITTELFUSE IXTH110N10L2	100 V	260 nC	Through Hole	MOSFET (Metal Oxide)	110 A	18 mOhm	10500 pF	TO-247-3	600 W	4.5 V	20 V	N-Channel	TO-247 (IXTH)	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

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