Specification	TBAT54,LM

Current - Average Rectified (Io)	140 mA
Current - Reverse Leakage	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3
Reverse Recovery Time (trr)	1.5 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	30 V
Voltage - Forward (Vf) (Max)	580 mV

TBAT54 Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOT-23(SOT23)

Part	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Current - Reverse Leakage	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Technology	Voltage - Forward (Vf) (Max)	Mounting Type	Package Name	Package / Case
Toshiba Semiconductor and Storage TBAT54,LM	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	2 µA	140 mA	30 V	1.5 ns	150 °C	Schottky	580 mV	Surface Mount	SOT-23-3	SC-59 SOT-23-3 TO-236-3

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