SUM90142E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 90A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 90A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM90142E-GE3

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	3120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SUM90142E-GE3	15 mOhm	-55 °C	175 ░C	Surface Mount	90 A	TO-263 (D2PAK)	N-Channel	375 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	87 nC	200 V	MOSFET (Metal Oxide)	3120 pF	10 V	7.5 V	20 V

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General part information

N-Channel 200 V 90A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources