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IXTP8N70X2

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LITTELFUSE

DISCMSFT NCHULTRAJNCTX2CLASS TO-220AB/FP/ TUBE

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IXTP8N70X2

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LITTELFUSE

DISCMSFT NCHULTRAJNCTX2CLASS TO-220AB/FP/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTP8 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP8N70X2

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	800 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max)	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXTP8 Series

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Vgs (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)
LITTELFUSE IXTP8N65X2M	32 W	4 A	TO-220	5 V	TO-220-3	12 nC	30 V	550 mOhm	-55 °C	150 °C	800 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	650 V
LITTELFUSE IXTP8N65X2M	32 W	4 A	TO-220	5 V	TO-220-3	12 nC	30 V	550 mOhm	-55 °C	150 °C	800 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	650 V
LITTELFUSE IXTP8N70X2M	32 W	4 A	TO-220 Isolated Tab	5 V	Isolated Tab TO-220-3 Full Pack	12 nC	30 V	550 mOhm	-55 °C	150 °C	800 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	700 V
LITTELFUSE IXTP8N70X2	150 W	8 A	TO-220-3	5 V	TO-220-3	12 nC	30 V	500 mOhm	-55 °C	150 °C	800 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	700 V
LITTELFUSE IXTP8N50PM	41 W	4 A	TO-220-3	5.5 V	TO-220-3	20 nC	30 V	800 mOhm	-55 °C	150 °C	1050 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	500 V
LITTELFUSE IXTP8N50P	150 W	8 A	TO-220-3	5.5 V	TO-220-3	20 nC	30 V	800 mOhm	-55 °C	150 °C	1050 pF	Through Hole	MOSFET (Metal Oxide)	10 V	N-Channel	500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

IXTP8N70X2 | Datasheet