AOT125A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT125A60L

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2993 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Alpha & Omega Semiconductor Inc. AOT125A60L	600 V	MOSFET (Metal Oxide)	125 mOhm	4.5 V	N-Channel	357 W	TO-220	20 V	28 A	-55 °C	150 °C	TO-220-3	2993 pF	10 V	39 nC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 2.18

General part information

N-Channel 600 V 28A (Tc) 357W (Tc) Through Hole TO-220

Technical documentation and resources