Specification	HN1D02F(TE85L,F)

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage	500 nA
Diode Configuration	Common Cathode
Diode Pair Count	2 pair
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SC-74, SOT-457
Package Name	SM6
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

HN1D02 Series

Diodes, 80 V/0.1 A Switching diode, SOT-363(US6)

Part	Technology	Package Name	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage	Diode Pair Count	Diode Configuration	Package / Case	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Voltage - Forward (Vf) (Max)	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)
Toshiba Semiconductor and Storage HN1D02F(TE85L,F)	Standard	SM6	100 mA	Surface Mount	500 nA	2 pair	Common Cathode	SC-74 SOT-457	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	1.2 V	4 ns	125 °C	-55 °C	80 V
Toshiba Semiconductor and Storage HN1D02FU(T5L,F,T)	Standard	ES6	100 mA	Surface Mount	500 nA	2 pair	Common Cathode	SOT-563 SOT-666	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	1.2 V	4 ns	125 °C		80 V
Toshiba Semiconductor and Storage HN1D02FU,LF	Standard	US6	100 mA	Surface Mount	500 nA	2 pair	Common Cathode	6-TSSOP SC-88 SOT-363	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	1.2 V	4 ns	125 °C		80 V

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