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STL38N65M5 - 8 Power VDFN

STL38N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.09 OHM TYP., 22.5 A, MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

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STL38N65M5 - 8 Power VDFN

STL38N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.09 OHM TYP., 22.5 A, MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTL38N65M5
Current - Continuous Drain (Id) @ 25°C3.5 A, 22.5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]71 nC
Input Capacitance (Ciss) (Max) @ Vds3000 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.8 W, 150 W
Rds On (Max) @ Id, Vgs [Max]105 mOhm
Supplier Device PackagePowerFlat™ (8x8) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.10
10$ 5.12
100$ 4.14
500$ 3.68
1000$ 3.15
Digi-Reel® 1$ 6.10
10$ 5.12
100$ 4.14
500$ 3.68
1000$ 3.15
Tape & Reel (TR) 3000$ 2.97

Description

General part information

STL38N65M5 Series

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.