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DMP10H400SK3-13 - TO-252-2

DMP10H400SK3-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 100V, 0.3OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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DMP10H400SK3-13 - TO-252-2

DMP10H400SK3-13

Active
Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 100V, 0.3OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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Technical Specifications

Parameters and characteristics for this part

SpecificationDMP10H400SK3-13
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]17.5 nC
Input Capacitance (Ciss) (Max) @ Vds1239 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs240 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

DMP10H400SK3 Series

P-Channel Enhancement Mode MOSFET

PartSupplier Device PackageTechnologyOperating Temperature [Min]Operating Temperature [Max]Vgs (Max)FET TypeRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Mounting TypeVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Current - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsPackage / CasePower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Drive Voltage (Max Rds On, Min Rds On) [Max]Drive Voltage (Max Rds On, Min Rds On) [Min]Gate Charge (Qg) (Max) @ Vgs
Diodes Inc
TO-252-3
MOSFET (Metal Oxide)
-55 °C
150 °C
20 V
P-Channel
240 mOhm
100 V
Surface Mount
3 V
4.5 V
10 V
9 A
1239 pF
DPAK (2 Leads + Tab)
SC-63
TO-252-3
42 W
17.5 nC
Diodes Inc
SOT-23-3
MOSFET (Metal Oxide)
-55 °C
150 °C
20 V
P-Channel
4.2 Ohm
100 V
Surface Mount
3 V
270 mA
87 pF
SC-59
SOT-23-3
TO-236-3
380 mW
4 V
10 V
1.8 nC
Diodes Inc
SOT-23-3
MOSFET (Metal Oxide)
-55 °C
150 °C
20 V
P-Channel
4.2 Ohm
100 V
Surface Mount
3 V
270 mA
87 pF
SC-59
SOT-23-3
TO-236-3
380 mW
4 V
10 V
1.8 nC
Diodes Inc
SOT-223-3
MOSFET (Metal Oxide)
-55 °C
150 °C
20 V
P-Channel
250 mOhm
100 V
Surface Mount
3 V
4.5 V
10 V
2.3 A
6 A
1239 pF
TO-261-4
TO-261AA
2 W
13.7 W
17.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Digi-Reel® 1$ 0.63
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Tape & Reel (TR) 2500$ 0.24
5000$ 0.23
12500$ 0.21

Description

General part information

DMP10H400SK3 Series

This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and Motherboard / Servers application.