MG1025-M16
ActiveMicrochip Technology
GAAS GUNN EPI DOWN HERMETIC STUD
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsGUNN Diodes Cathode MG1001 - MG1060
MG1025-M16
ActiveMicrochip Technology
GAAS GUNN EPI DOWN HERMETIC STUD
Deep-Dive with AI
DocumentsGUNN Diodes Cathode MG1001 - MG1060
Technical Specifications
Parameters and characteristics for this part
| Specification | MG1025-M16 |
|---|---|
| Current - Max [Max] | 1 A |
| Diode Type | PIN - Single |
| Package / Case | Stud |
| Power Dissipation (Max) [Max] | 20 mW |
| Voltage - Peak Reverse (Max) [Max] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 294.54 | |
| 50 | $ 282.56 | |||
| 100 | $ 265.80 | |||
| 250 | $ 253.83 | |||
| 500 | $ 244.26 | |||
| 1000 | $ 239.45 | |||
MG1025 Series
V-W-Band-Gunn
| Part | Voltage - Peak Reverse (Max) [Max] | Current - Max [Max] | Diode Type | Power Dissipation (Max) [Max] | Package / Case |
|---|---|---|---|---|---|
Microchip Technology MG1025-M16 | 4.5 V | 1 A | PIN - Single | 20 mW | Stud |
Description
General part information
MG1025 Series
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
Documents
Technical documentation and resources