IXFB38N100Q2

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IXYS

MOSFET N-CH 1000V 38A PLUS264

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IXYS

MOSFET N-CH 1000V 38A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB38N100Q2

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
IXYS IXFB38N100Q2	5.5 V	TO-264-3 TO-264AA	PLUS264™	MOSFET (Metal Oxide)	13500 pF	38 A	N-Channel	-55 °C	150 °C	Through Hole	10 V	1000 V	30 V	250 mOhm	890 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 38A (Tc) 890W (Tc) Through Hole PLUS264™

Technical documentation and resources

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