BYW4200B-TR
ActiveSTMicroelectronics
DIODE GEN PURP 200V 4A DPAK
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BYW4200B-TR
ActiveSTMicroelectronics
DIODE GEN PURP 200V 4A DPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYW4200B-TR |
|---|---|
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DPAK |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
BYW420 Series
DIODE GEN PURP 200V 4A DPAK
| Part | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Package / Case | Reverse Recovery Time (trr) | Supplier Device Package | Speed | Technology | Mounting Type | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BYW4200B-TR | 1.25 V | 200 V | 10 µA | 150 °C | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 35 ns | DPAK | 200 mA, 500 ns | Standard | Surface Mount | 4 A |
Description
General part information
BYW420 Series
Diode 200 V 4A Surface Mount DPAK
Documents
Technical documentation and resources
No documents available