BYW4200B-TR

Obsolete

STMicroelectronics

DIODE GEN PURP 200V 4A DPAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

DIODE GEN PURP 200V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYW4200B-TR

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Technology	Mounting Type	Current - Average Rectified (Io)
STMicroelectronics BYW4200B-TR	1.25 V	200 V	10 µA	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	35 ns	DPAK	200 mA 500 ns	Standard	Surface Mount	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 4A Surface Mount DPAK

Technical documentation and resources

No documents available