BSC015NE2LS5IATMA1
ActiveInfineon Technologies
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.5 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
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BSC015NE2LS5IATMA1
ActiveInfineon Technologies
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 1.5 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC015NE2LS5IATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A, 33 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 50 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 1.5 mOhm |
| Supplier Device Package | PG-TDSON-8-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC015 Series
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
Documents
Technical documentation and resources