MT29F4T08CTHBBM5-3C:BTR

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Micron Technology Inc.

IC FLASH 4TBIT PARALLEL 333MHZ

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Micron Technology Inc.

IC FLASH 4TBIT PARALLEL 333MHZ

Technical Specifications

Parameters and characteristics for this part

Part	Memory Size	Memory Organization	Memory Format	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Type	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Memory Interface	Clock Frequency
Micron Technology Inc. MT29F4T08EULGEM4-ITF:G TR	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08EULEEM4-R:E	4 Tbit	512 G	FLASH	3.6 V	2.6 V	Non-Volatile	Surface Mount	132-BGA	132-LBGA (12x18)	70 °C	0 °C	FLASH - NAND (TLC)	Parallel
Micron Technology Inc. MT29F4T08GMLCEJ4-M:C TR	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08GMLCEJ4-QM:C	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08CTHBBM5-3C:BTR	4 Tbit	512 G	FLASH	3.6 V	2.5 V	Non-Volatile				70 °C	0 °C	FLASH - NAND	Parallel	333 MHz
Micron Technology Inc. MT29F4T08EULCEM4-QJ:C TR	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08GMLCEJ4-QA:C	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08GMLCEJ4-QA:C TR	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08EULKEM4-ITF:K TR	4 Tbit	512 G	FLASH
Micron Technology Inc. MT29F4T08EULKEM4-ITF:K	4 Tbit	512 G	FLASH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

Technical documentation and resources

No documents available