FMM60-02TF

Obsolete

IXYS

MOSFET 2N-CH 200V 33A I4-PAC

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Obsolete

IXYS

MOSFET 2N-CH 200V 33A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMM60-02TF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power - Max [Max]	125 W
Rds On (Max) @ Id, Vgs [Max]	40 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Configuration	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
IXYS FMM60-02TF	200 V	125 W	3700 pF	i4-Pac™-5	40 mOhm	2 N-Channel (Dual)	ISOPLUS i4-PAC™	90 nC	Through Hole	33 A	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 200V 33A 125W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

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