AON7611

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 9A/18.5A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 9A/18.5A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON7611

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	18.5 A
Current - Continuous Drain (Id) @ 25°C [Min]	9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-DFN-EP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Supplier Device Package	Configuration	FET Feature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AON7611	2.5 V	10 nC	30 V	MOSFET (Metal Oxide)	1.5 W	9 A	18.5 A	8-DFN-EP (3x3)	Common Drain N and P-Channel	Logic Level Gate	8-PowerVDFN	170 pF	-55 °C	150 °C	Surface Mount	50 mOhm

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General part information

Mosfet Array 30V 9A, 18.5A 1.5W Surface Mount 8-DFN-EP (3x3)

Technical documentation and resources