M55342K09B17E8RWSV

Active

Vishay General Semiconductor - Diodes Division

RES SMD 17.8K OHM 1% 1W 2512

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

M55342K09B17E8RWSV

Active

Vishay General Semiconductor - Diodes Division

RES SMD 17.8K OHM 1% 1W 2512

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	M55342K09B17E8RWSV

Composition	Thin Film
Failure Rate	R (0.01%)
Features	Military, Non-Inductive
Height - Seated (Max) [Max] [z]	0.84 mm
Height - Seated (Max) [Max] [z]	0.033 "
Number of Terminations	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6432 Metric
Package / Case	2512
Power (Watts)	1 W
Resistance	17.8 kOhms
Size / Dimension [x]	6.58 mm
Size / Dimension [x]	0.259 "
Size / Dimension [y]	0.124 "
Size / Dimension [y]	3.15 mm
Supplier Device Package	2512
Temperature Coefficient	100 ppm/°C
Tolerance	1 %

M55342 Series

...

Part	Temperature Coefficient	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Composition	Failure Rate	Number of Terminations	Features	Operating Temperature [Min]	Operating Temperature [Max]	Tolerance	Package / Case	Power (Watts)	Power (Watts)	Resistance	Height - Seated (Max) [Max] [z]	Height - Seated (Max) [Max] [z]	Supplier Device Package	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division M55342E12B931ART0
Vishay General Semiconductor - Diodes Division M55342H06B732DRWIM
Vishay General Semiconductor - Diodes Division M55342E12B6B65RTI
Vishay General Semiconductor - Diodes Division M55342E12B475ARTS
Vishay General Semiconductor - Diodes Division M55342H03B14B5RT0
Vishay General Semiconductor - Diodes Division M55342E06B59D0SWI
Vishay General Semiconductor - Diodes Division M55342E12B68B0RWS	25 ppm/°C	0.032 in	0.064 in	0.81 mm	1.63 mm	Thin Film	R (0.01%)	2	Military Non-Inductive	-55 °C	150 °C	0.1 %	0603 (1608 Metric)	0.1 W	0.1 W	68 kOhms	0.84 mm	0.033 "
Vishay General Semiconductor - Diodes Division M55342K09B17E8RWSV	100 ppm/°C	0.124 "	0.259 "	3.15 mm	6.58 mm	Thin Film	R (0.01%)	2	Military Non-Inductive	-55 °C	150 °C	1 %	2512	1 W		17.8 kOhms	0.84 mm	0.033 "	2512	6432 Metric
Vishay General Semiconductor - Diodes Division M55342E04B625ARWS	25 ppm/°C	0.05 "	0.155 in	1.27 mm	3.94 mm	Thin Film	R (0.01%)	2	Military Non-Inductive	-55 °C	150 °C	0.1 %	Nonstandard	150 mW		625 Ohms	0.84 mm	0.033 "			1505
Vishay General Semiconductor - Diodes Division M55342E06B68A0RBS	25 ppm/°C	0.05 "	0.08 "	1.27 mm	2.03 mm	Thin Film	R (0.01%)	2	Military Non-Inductive	-55 °C	150 °C	0.1 %	0805	150 mW		68 Ohms	0.84 mm	0.033 "	0705

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	25	$ 14.13

Description

General part information

M55342 Series

17.8 kOhms ±1% 1W Chip Resistor 2512 (6432 Metric) Military, Non-Inductive Thin Film

Documents

Technical documentation and resources