DMN2020LSN-7

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Diodes Inc

MOSFET N-CH 20V 6.9A SC59-3

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Diodes Inc

MOSFET N-CH 20V 6.9A SC59-3

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2020LSN-7

Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	610 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	SC-59-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type
Diodes Inc DMN2020LSN-7	11.6 nC	MOSFET (Metal Oxide)	2.5 V 4.5 V	SC-59 SOT-23-3 TO-236-3	SC-59-3	Surface Mount	20 V	-55 °C	150 °C	20 mOhm	6.9 A	610 mW	1.5 V	12 V	N-Channel

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