Specification	UPA2706GR-E1-AT

Current - Continuous Drain (Id) (Ta)	11 A
Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.1 nC
Input Capacitance (Ciss) (Max)	660 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package Length	0.173 in
Package Name	8-SOP, 8-SOIC
Package Width	4.4 mm
Power Dissipation (Max)	15 W, 3 W
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

UPA2706GR Series

Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8

Part	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	FET Type	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Package Name	Gate Charge (Max)	Operating Temperature	Power Dissipation (Max)	Package Length	Package Width	Input Capacitance (Ciss) (Max)
Renesas Electronics Corporation UPA2706GR-E1-AT	15 mOhm	4 V	10 V	20 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	30 V	20 A	11 A	Surface Mount	8-SOIC 8-SOP	7.1 nC	150 °C	3 W 15 W	0.173 in	4.4 mm	660 pF
Renesas Electronics Corporation UPA2706GR-E1-A	15 mOhm	4 V	10 V	20 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	30 V	20 A	11 A	Surface Mount	8-SOIC 8-SOP	7.1 nC	150 °C	3 W 15 W	0.173 in	4.4 mm	660 pF
Renesas Electronics Corporation UPA2706GR-E2-AT	15 mOhm	4 V	10 V	20 V	N-Channel	2.5 V	MOSFET (Metal Oxide)	30 V	20 A	11 A	Surface Mount	8-SOIC 8-SOP	7.1 nC	150 °C	3 W 15 W	0.173 in	4.4 mm	660 pF

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