BCR 158 B6327

Obsolete

Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

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Obsolete

Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCR 158 B6327

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	PG-SOT23
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Base (R1)	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]
Infineon Technologies BCR 158L3 E6327	SC-101 SOT-883	47000 Ohms	50 V	PG-TSLP-3-4	100 mA	300 mV	Surface Mount	2.2 kOhm	200 MHz	100 nA	70	PNP - Pre-Biased	250 mW
Infineon Technologies BCR 158 B6327	SC-59 SOT-23-3 TO-236-3	47000 Ohms	50 V	PG-SOT23	100 mA	300 mV	Surface Mount	2.2 kOhm	200 MHz	100 nA	70	PNP - Pre-Biased	200 mW
Infineon Technologies BCR 158F E6327	SOT-723	47000 Ohms	50 V	PG-TSFP-3	100 mA	300 mV	Surface Mount	2.2 kOhm	200 MHz	100 nA	70	PNP - Pre-Biased	250 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

Technical documentation and resources