2SC3328-Y,T6CKF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 80V 2A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 80V 2A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3328-Y,T6CKF(J

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Mounting Type	Power - Max [Max]	Transistor Type
Toshiba Semiconductor and Storage 2SC3328-Y,T6CKF(J	80 V	70	TO-226-3 TO-92-3 Long Body	2 A	150 °C	1 µA	100 MHz	500 mV	TO-92MOD	Through Hole	900 mW	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 2 A 100MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources