RN2103(T5L,F,T)

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN2103(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	SSM
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Package / Case	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN2103MFV,L3F(CT	70	150 mW	300 mV	250 MHz	SOT-723	Surface Mount	22 kOhms	100 mA	PNP - Pre-Biased	VESM	500 nA	22 kOhms	50 V
Toshiba Semiconductor and Storage RN2103(T5L,F,T)	70	100 mW	300 mV	200 MHz	SC-75 SOT-416	Surface Mount	22 kOhms	100 mA	PNP - Pre-Biased	SSM	500 nA	22 kOhms	50 V

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

Technical documentation and resources