Specification	SQJB40EP-T1_GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Package Name	PowerPAK® SO-8 Dual
Power - Max	34 W
Qualification	AEC-Q101
Rds On (Max)	8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQJB40 Series

Part	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Mounting Type	Technology	Package / Case	Power - Max	Package Name	Qualification	Vgs(th) (Max)
Vishay Dale SQJB40EP-T1_GE3	Automotive	-55 °C	175 °C	35 nC	2	N-Channel	Dual	40 V	1900 pF	30 A	8 mOhm	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	34 W	PowerPAK® SO-8 Dual	AEC-Q101	2.5 V

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