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TPN2R203NC,L1Q

TPN2R203NC,L1Q

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0022 Ω@10V, TSON ADVANCE, U-MOSⅧ

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TPN2R203NC,L1Q

TPN2R203NC,L1Q

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0022 Ω@10V, TSON ADVANCE, U-MOSⅧ

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Description

General part information

TPN2R203NC Series

12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0022 Ω@10V, TSON Advance, U-MOSⅧ

Technical Specifications

Parameters and characteristics for this part

SpecificationTPN2R203NC,L1Q
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)34 nC
Input Capacitance (Ciss) (Max)2230 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Package Length3.1 mm
Package Name8-TSON Advance
Package Width3.1 mm
Power Dissipation (Max)700 mW, 42 W
Rds On (Max)2.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.3 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TPN2R203NC,L1Q | Datasheet
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Simplified CFD Model Application Note
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Structures and Characteristics: Power MOSFET Application Notes
Avalanche energy calculation
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Electrical Characteristics: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
RC Snubbers for Step-Down Converters
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
MOSFET Self-Turn-On Phenomenon
MOSFET SPICE model grade
Hints and Tips for Thermal Design part3
Calculating the Temperature of Discrete Semiconductor Devices
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Selection Guide MOSFETs 2025 Rev1.0
Derating of the MOSFET Safe Operating Area
TPN2R203NC Data sheet/Japanese