
1N4750A-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 27V 1.3W DO41

1N4750A-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 27V 1.3W DO41
Description
General part information
1N4750 Series
TN1.pdf
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4750A-TAP |
|---|---|
| Current - Reverse Leakage | 5 µA |
| Grade | Automotive |
| Impedance (Max) (Zzt) | 35 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | Axial, DO-204AL, DO-41 |
| Package Name | DO-204AL (DO-41) |
| Power - Max | 1.3 W |
| Qualification | AEC-Q101 |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) | 1.2 V |
| Voltage - Zener (Nom) (Vz) | 27 V |
Pricing
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CAD
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Documents
Technical documentation and resources