IXFT12N100F
ObsoleteMOSFET N-CH 1000V 12A TO268
IXFT12N100F
ObsoleteMOSFET N-CH 1000V 12A TO268
Description
General part information
IXFT12 Series
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFT12N100F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 77 nC |
| Input Capacitance (Ciss) (Max) | 2700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268-3, TO-268AA |
| Package Name | TO-268 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) | 1.05 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 5.5 V |
Pricing
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