Specification	SIR876ADP-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	49 nC, 49 nC
Input Capacitance (Ciss) (Max)	1630 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	62.5 W, 5 W
Rds On (Max)	10.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SIR876 Series

Part	Input Capacitance (Ciss) (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Gate Charge (Max)	Vgs (Max)	Package / Case
Vishay Dale SIR876DP-T1-GE3	1640 pF	MOSFET (Metal Oxide)	10 V	4.5 V	10.8 mOhm	Surface Mount	2.8 V	100 V	N-Channel	-55 °C	150 °C	PowerPAK® SO-8	40 A	5 W 62.5 W	48 nC 48 nC	20 V	PowerPAK® SO-8
Vishay Dale SIR876ADP-T1-GE3	1630 pF	MOSFET (Metal Oxide)	10 V	4.5 V	10.8 mOhm	Surface Mount	2.8 V	100 V	N-Channel	-55 °C	150 °C	PowerPAK® SO-8	40 A	5 W 62.5 W	49 nC 49 nC	20 V	PowerPAK® SO-8

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