Specification	IXTX60N50L2

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	610 nC
Input Capacitance (Ciss) (Max)	24000 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3 Variant
Package Name	PLUS247™-3
Power Dissipation (Max)	960 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

IXTX60 Series

Part	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)	Mounting Type	Package / Case	Package Name	Current - Continuous Drain (Id) (Tc)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
LITTELFUSE IXTX60N50L2	960 W	100 mOhm	30 V	Through Hole	TO-247-3 Variant	PLUS247™-3	60 A	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V	610 nC	500 V	24000 pF	10 V	N-Channel
LITTELFUSE IXTX60N50L2	960 W	100 mOhm	30 V	Through Hole	TO-247-3 Variant	PLUS247™-3	60 A	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 V	610 nC	500 V	24000 pF	10 V	N-Channel

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