Specification	CMS16P06H8-HF

Current - Continuous Drain (Id) (Ta)	5 A
Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1256 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	DFN5x6 (PR-PAK)
Power Dissipation (Max)	25 W, 2 W
Rds On (Max)	48 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

CMS16 Series

Part	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Technology	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Package / Case	Rds On (Max)	Mounting Type
Comchip Technology CMS16N06D-HF	20 V	N-Channel	4.4 A	16 A	MOSFET (Metal Oxide)	815 pF	-55 °C	150 °C	14 nC	2 W 27 W	10 V	4.5 V	60 V	2.5 V	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	50 mOhm	Surface Mount
Comchip Technology CMS16P06H8-HF	20 V	P-Channel	5 A	16 A	MOSFET (Metal Oxide)	1256 pF	-55 °C	150 °C	22 nC	2 W 25 W	10 V	4.5 V	60 V	2.5 V	DFN5x6 (PR-PAK)	8-PowerTDFN	48 mOhm	Surface Mount

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