Specification	SI4160DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	25.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	54 nC
Input Capacitance (Ciss) (Max)	2071 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max)	4.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

SI4160 Series

Part	Vgs(th) (Max)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Technology	Package Length	Package Name	Package Width	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI4160DY-T1-GE3	2.4 V	Surface Mount	2.5 W 5.7 W	30 V	54 nC	25.4 A	N-Channel	4.9 mOhm	10 V	4.5 V	2071 pF	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	20 V	-55 °C	150 °C

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