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BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 28 MOHM;

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BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

Obsolete
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 28 MOHM;

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Description

General part information

BSB280 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSB280N15NZ3GXUMA1
Current - Continuous Drain (Id) (Ta)9 A
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)1600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / Case3-WDSON
Package NameCanPAK M™, MG-WDSON-2
Power Dissipation (Max)2.8 W, 57 W
Rds On (Max)28 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part