Specification	C3M0065090J

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	660 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	113 W
Rds On (Max)	78 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	19 V
Vgs(th) (Max)	3.5 V

C3M0065090 Series

Part	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Leads	Vgs (Max) Negative	Vgs (Max) Positive	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package / Case
Wolfspeed, Inc. C3M0065090J	3.5 V	35 A	SiCFET (Silicon Carbide)	15 V	D2PAK TO-263-7	900 V	N-Channel	Surface Mount	78 mOhm	-55 °C	150 °C	7 Leads	-8 V	19 V	30 nC	113 W	660 pF
Wolfspeed, Inc. C3M0065090D	3.5 V	36 A	SiCFET (Silicon Carbide)	15 V	TO-247-3	900 V	N-Channel	Through Hole	78 mOhm	-55 °C	150 °C		-8 V	18 V	30.4 nC	125 W	660 pF	TO-247-3
Wolfspeed, Inc. C3M0065090J-TR	3.5 V	35 A	SiCFET (Silicon Carbide)	15 V	D2PAK TO-263-7	900 V	N-Channel	Surface Mount	78 mOhm	-55 °C	150 °C	7 Leads	-8 V	19 V	30 nC	113 W	660 pF

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