IRF7416TRPBF

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INFINEON

POWER MOSFET, P CHANNEL, 30 V, 10 A, 0.02 OHM, SOIC, SURFACE MOUNT

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IRF7416TRPBF

Active

INFINEON

POWER MOSFET, P CHANNEL, 30 V, 10 A, 0.02 OHM, SOIC, SURFACE MOUNT

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRF7416 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7416TRPBF

Current - Continuous Drain (Id) (Ta)	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	92 nC
Input Capacitance (Ciss) (Max)	1700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

IRF7416 Series

Part	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package Name	Package Length	Package Width	Mounting Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
INFINEON IRF7416TRPBF	92 nC	10 V	4.5 V	MOSFET (Metal Oxide)	10 A	1 V	-55 °C	150 °C	P-Channel	1700 pF	20 V	8-SO 8-SOIC	0.154 in	3.9 mm	Surface Mount	20 mOhm	30 V	2.5 W